Relaxation-based harmonic balance technique for semiconductor device simulation

Authors:
Boris Troyanovsky;Zhiping Yu;Lydia So;Robert W. Dutton
Affiliations:
Center for Integrated Systems, Stanford University, Stanford, CA;Center for Integrated Systems, Stanford University, Stanford, CA;Center for Integrated Systems, Stanford University, Stanford, CA;Center for Integrated Systems, Stanford University, Stanford, CA
Venue:
ICCAD '95 Proceedings of the 1995 IEEE/ACM international conference on Computer-aided design
Year:
1995

Citing 1
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Abstract

Harmonic and intermodulation distortion effects play an important role in numerous analog applications, particularly in such areas as wireless communication systems. In this paper, we present a two-dimensional harmonic balance semiconductor device simulator which accurately models these nonlinear effects at the physical (drift-diffusion) level. The simulator is based on Stanford University's PISCES code, and supports the full range of physical models and features present in the time-domain version of the program. A modified block Gauss-Seidel-Newton nonlinear relaxation scheme is developed to efficiently handle the extremely large size of two-dimensional harmonic balance semiconductor device simulation problems.