Ultrahigh density, high-data-rate NEMS-based AFM data storage system

  • Authors:

  • P. Vettiger;J. Brugger;M. Despont;U. Drechsler;U. Dürig;W. Häberle;M. Lutwyche;H. Rothuizen;R. Stutz;R. Widmer;G. Binnig

  • Affiliations:

  • IBM Research Division, Zurich Research Laboratory, 8803 Rüschlikon, Switzerland;IBM Research Division, Zurich Research Laboratory, 8803 Rüschlikon, Switzerland;IBM Research Division, Zurich Research Laboratory, 8803 Rüschlikon, Switzerland;IBM Research Division, Zurich Research Laboratory, 8803 Rüschlikon, Switzerland;IBM Research Division, Zurich Research Laboratory, 8803 Rüschlikon, Switzerland;IBM Research Division, Zurich Research Laboratory, 8803 Rüschlikon, Switzerland;IBM Research Division, Zurich Research Laboratory, 8803 Rüschlikon, Switzerland;IBM Research Division, Zurich Research Laboratory, 8803 Rüschlikon, Switzerland;IBM Research Division, Zurich Research Laboratory, 8803 Rüschlikon, Switzerland;IBM Research Division, Zurich Research Laboratory, 8803 Rüschlikon, Switzerland;IBM Research Division, Zurich Research Laboratory, 8803 Rüschlikon, Switzerland

  • Venue:
  • Microelectronic Engineering
  • Year:
  • 1999

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Abstract

We report on an AFM-array concept (''Millipede'') for data storage of potentially ultrahigh density, terabit capacity, and high data rate. Thermomechanical writing and reading in very thin polymer films is used to store and sense 30-40-nm-sized bits with similar pitch size in very thin layers of PMMA, resulting in 400-500 Gbit/in^2 storage densities. Data rates of several hundred Mbit/s are envisioned by operating very large (32x32) 2D AFM arrays in parallel. We have successfully batch-fabricated first all-silicon 5x5 and 32x32 AFM cantilever array chips. They constitute a major step of the Millipede concept towards terabit storage systems with small form factor and high data rates. Our 32x32 array chip is the first VLSI-NEMS (Nano ElectroMechanical Systems) for nanotechnological applications.