Robust Design of Basic Low Voltage CMOS Transconductors

  • Authors:

  • Tuna B. Tarim;H. Hakan Kuntman;Mohammed Ismail

  • Affiliations:

  • Istanbul Technical University, Istanbul, Turkey, and the Analog VLSI Lab. of The Ohio State University, Columbus, Ohio, USA;Department of Electronics Engineering, Istanbul Technical University, Istanbul, Turkey;Department of Electrical Engineering, The Ohio State University, Columbus, OH 43210, USA and Radio Electronics Lab, Royal Institute of Technology, Kista-Stockholm, Sweden

  • Venue:
  • Journal of VLSI Signal Processing Systems - Mixed-signal design issues
  • Year:
  • 1999

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Abstract

Two new low voltage transconductors are introduced and thestatistical design of these transconductors are presented. Thecircuits operate in the saturation region with fully balanced inputsignals. Initial circuit simulation results are given. Responsesurface methodology and design of experiment techniques are used asstatistical VLSI design tools together with the statistical MOS(SMOS) model. The response surfaces obtained for the twotransconductors show the trade-off between area and functional yield.Using these contours, the designer will be able to estimate thefunctional yield of the circuits before fabrication. The contoursalso provide information regarding which transistor aspect ratios areto be altered to achieve a better functional yield.