A BiCMOS Wideband Amplifier for the Extraction of Base Spreading Resistance with Noise Measurement Techniques

  • Authors:

  • Frode Larson;Peter Kascak;Mohammed Ismail

  • Affiliations:

  • Analog VLSI Laboratory, Department of Electrical Engineering, The Ohio State University, 2015 Neil Avenue, Columbus, OH 43210, USA;Analog VLSI Laboratory, Department of Electrical Engineering, The Ohio State University, 2015 Neil Avenue, Columbus, OH 43210, USA;Analog VLSI Laboratory, Department of Electrical Engineering, The Ohio State University, 2015 Neil Avenue, Columbus, OH 43210, USA

  • Venue:
  • Analog Integrated Circuits and Signal Processing
  • Year:
  • 2000

Quantified Score

Hi-index 0.00

Visualization

Abstract

This paper presents a BiCMOS wide band amplifier optimized for maximum sensitivity to noise introduced in the base spreading resistance. It was used to characterize the base spreading resistance of bipolar devices found in Orbit’s low-noise, n-well BiCMOS process available through MOSIS. The base spreading resistance is extracted by measuring the output power spectral density of the aforementioned amplifier and isolating the amount caused by thermal noise in the base. The results give insight as to what noise sources are significant in this technology.