Optimizing the Dimensions of Driver and Power Transistor in Switching CMOS RF Amplifiers

  • Authors:

  • Patrick Reynaert;Koen Mertens;Michiel Steyaert

  • Affiliations:

  • Katholieke Universiteit Leuven, Departement of Electrical Engineering, ESAT-MICAS, Kasteelpark Arenberg 10, B-3001 Heverlee (Leuven), Belgium;Katholieke Universiteit Leuven, Departement of Electrical Engineering, ESAT-MICAS, Kasteelpark Arenberg 10, B-3001 Heverlee (Leuven), Belgium;Katholieke Universiteit Leuven, Departement of Electrical Engineering, ESAT-MICAS, Kasteelpark Arenberg 10, B-3001 Heverlee (Leuven), Belgium

  • Venue:
  • Analog Integrated Circuits and Signal Processing
  • Year:
  • 2002

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Abstract

Today, there is a trend towards integration of complex RF systems on a single die. The interaction between the different building blocks will cause a performance degradation of each individual building block. So, optimizing the performance of the total system is under discussion. When combining a CMOS power amplifier together with an up-conversion mixer, some pre-amplifier stages have to be placed between the mixer and the CMOS power transistor. How this stages have to be designed (sized) and how they affect the performance of the power amplifier, will be investigated in this paper.