Magnetoresistive Structures for Artificial Neurons

  • Authors:

  • S. I. Kasatkin

  • Affiliations:

  • Trapeznikov Institute of Control Sciences, Russian Academy of Sciences, Moscow, Russia

  • Venue:
  • Automation and Remote Control
  • Year:
  • 2002

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Abstract

Principles of operation, structure, and theoretical characteristics of an artificial neuron without activating function, which consists of series-connected memory elements based on multilayer thin-film anisotropic, spin-valve, and spin-tunneling magnetoresistive structures, are investigated. Examples of such neurons based on memory elements with optimal parameters are given. Prospects for three types of neurons are outlined.