Generalized asymmetrical bidirectional associative memory for multiple association

Authors:
Tae-Dok Eom;Changkyu Choi;Ju-Jang Lee
Affiliations:
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Kusong-dong, Yusong-gu, Taejon 305-701, South Korea;Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Kusong-dong, Yusong-gu, Taejon 305-701, South Korea;Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Kusong-dong, Yusong-gu, Taejon 305-701, South Korea
Venue:
Applied Mathematics and Computation
Year:
2002

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Abstract

A classical bidirectional associative memory (BAM) suffers from low storage capacity and abundance of spurious memories though it has the properties of good generalization and noise immunity. In this paper, Hamming distance in recall procedure of usual asymmetrical BAM is replaced with modified Hamming distance by introducing weighting matrix into connection matrix. This generalization is validated to increase storage capacity, to lessen spurious memories, to enhance noise immunity, and to enable multiple association using simulation work.