Efficient implementation of essentially non-oscillatory shock-capturing schemes,II
Journal of Computational Physics
Semiconductor equations
The effects of numerical viscosities. I: slowly moving shocks
Journal of Computational Physics
Uniformly Accurate Schemes for Hyperbolic Systems with Relaxation
SIAM Journal on Numerical Analysis
Existence and the singular relaxation limit for the inviscid hydrodynamic energy model
Modelling and computation for applications in mathematics, science, and engineering
Quarterly of Applied Mathematics
Relaxation of the isothermal Euler—Poisson system to the drift-diffusion equations
Quarterly of Applied Mathematics
Discrete Kinetic Schemes for Multidimensional Systems of Conservation Laws
SIAM Journal on Numerical Analysis
SIAM Journal on Scientific Computing
Essentially Non-Oscillatory and Weighted Essentially Non-Oscillatory Schemes for Hyperbolic Conservation Laws
Numerical approximation of the viscous quantum hydrodynamic model for semiconductors
Applied Numerical Mathematics
Self-heating in a coupled thermo-electric circuit-device model
Journal of Computational Electronics
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In this paper, we shall study numerically the hydrodynamic model for semiconductor devices, particularly in a one-dimensional n+nn+ diode. By using a relaxation scheme, we explore the effects of various parameters, such as the low field mobility, device length, and lattice temperature. The effect of different types of boundary conditions is discussed. We also establish numerically the asymptotic limits of the hydrodynamic model towards the energy-transport and drift-diffusion models. This verifies the theoretical results in the literature.