Role of oxidizer in the chemical mechanical planarization of the Ti/TiN barrier layer

Authors:
V. S. Chathapuram;T. Du;K. B. Sundaram;V. Desai
Affiliations:
Advanced Materials Processing and Analysis Center, Orlando, FL and School of Electrical Engineering and Computer Science, University of Central Florida, 4000 University Blvd., Orlando, FL;Advanced Materials Processing and Analysis Center, Orlando, FL;Advanced Materials Processing and Analysis Center, Orlando, FL and School of Electrical Engineering and Computer Science, University of Central Florida, 4000 University Blvd., Orlando, FL;Advanced Materials Processing and Analysis Center, Orlando, FL
Venue:
Microelectronic Engineering
Year:
2003

Citing 7
Cited 7

Fundamentals of queueing theory (2nd ed.).

Fundamentals of queueing theory (2nd ed.).
A queue with starter and a queue with vacations: delay analysis by decomposition

Operations Research
Queueing systems with vacations—a survey

Queueing Systems: Theory and Applications
State dependence in M/G/1 server-vacation models

Operations Research
The GI/M/1 queue with exponential vacations

Queueing Systems: Theory and Applications
Exponential two server queue with N-policy and general vacations

Queueing Systems: Theory and Applications
Theory, Volume 1, Queueing Systems

Theory, Volume 1, Queueing Systems

Polishing mechanism of tantalum films by SiO2 particles

Microelectronic Engineering
Platinum chemical mechanical polishing (CMP) characteristics for high density ferroelectric memory applications

Microelectronic Engineering
Heavy-traffic limits for many-server queues with service interruptions

Queueing Systems: Theory and Applications
A Performance Model for Maintenance Tasks in an Environment of Virtualized Servers

NETWORKING '09 Proceedings of the 8th International IFIP-TC 6 Networking Conference
Analysis of multi-server queue with synchronous vacations and gated discipline

Proceedings of the 6th International Conference on Queueing Theory and Network Applications
Multi-server machine repair model with standbys and synchronous multiple vacation

Computers and Industrial Engineering
M/M/1 retrial queue with working vacations and negative customer arrivals

International Journal of Advanced Intelligence Paradigms

Quantified Score

Hi-index	2.88

Visualization

Abstract

The electrochemical parameters controlling the polishing rates of Ti and TiN are investigated. In this paper, alumina containing slurry was studied at pH 4 with 5% H2O2 as the oxidizer. Passive film formation on the surface during chemical mechanical polishing (CMP) plays an important role. To understand the oxide growth mechanism and the surface chemistry, X-ray photoelectron spectroscopy was performed. It was found that in the absence of an oxidizer, the removal of Ti and TiN is mainly due to mechanical abrasion of oxide layer or metal layer. However, in the presence of 5% H2O2 as the oxidizer, different removal behavior was observed for Ti and TiN. The removal mechanism of Ti during CMP is mainly due to mechanical abrasion of the oxide layer whereas for TiN it could be attributed to the formation of metastable soluble peroxide complexes.