Relating Data Characteristics to Transition Activity in High-Level Static CMOS Design

  • Authors:
  • Russell Henning;Chaitali Chakrabarti

  • Affiliations:
  • -;-

  • Venue:
  • VLSID '00 Proceedings of the 13th International Conference on VLSI Design
  • Year:
  • 2000

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Abstract

Significant power reduction can be obtained in the datapath of a CMOS VLSI circuit if data characteristics are carefully exploited. An improved approach that achieves such reduction by using a new model relating important data characteristics to the transition activity in static CMOS circuits is presented. Specifically, relationships between fixed-point, two's complement data and 0-1 transition activity in static CMOS circuits are identified. Models for computing transition activity in terms of a set of statistical parameters are developed, and their performance compared with the Dual Bit Type model. Then, the use of the relationships and models to analyze and significantly reduce 0-1 transition activity with little computational effort is illustrated by several, high-level synthesis examples.