Reverse-order source/drain formation with double offset spacer (RODOS) for CMOS low-power, high-speed and low-noise amplifiers

  • Authors:

  • Woo Young Choi;Jong Duk Lee;Byung-Gook Park

  • Affiliations:

  • Inter-University Semiconductor Research Center (ISRC) and Seoul National University, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea;Inter-University Semiconductor Research Center (ISRC) and Seoul National University, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea;Inter-University Semiconductor Research Center (ISRC) and Seoul National University, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea

  • Venue:
  • Proceedings of the 2003 international symposium on Low power electronics and design
  • Year:
  • 2003

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Abstract

RODOS (Reverse-Order source/drain formation with Double Offset Spacer) was proposed for low-power, high-speed and low-noise amplifiers. Relying on simulation data, we confirmed the high feasibility of the RODOS process. It showed improved performance in linearity (VIP3). Additionally, by optimizing process parameters, we achieved small gate delay (CV/I) and low static/dynamic power consumption. It satisfied most of the requirements of LOP and LSTP in ITRS 2002. Finally, it is found out that the devices with the RODOS structure can be a promising alternative to implement low-power, high-speed and low-noise amplifiers for radio on a chip.