Flash memory quality and reliability issues

  • Authors:

  • R. Verma

  • Affiliations:

  • -

  • Venue:
  • MTDT '96 Proceedings of the 1996 IEEE International Workshop on Memory Technology, Design and Testing (MTDT '96)
  • Year:
  • 1996

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Abstract

Abstract: The Flash memory technology uses dual layer polysilicon gate technology to store charge permanently. With the technology shrinking to smaller geometries, there comes the quality and reliability issues of the small geometry in addition to the existing memory reliability issues. The NOR flash cell architecture and its programming and erasing techniques are discussed. The paper describes some of the quality and reliability issues which exist in the flash memories today and the stresses done to evaluate those issues.