Electrostatic Discharge Protection for RF Integrated Circuits: New ESD Design Challenges

  • Authors:

  • H. G. Feng;R. Y. Zhan;G. Chen;Q. Wu;Albert Z. Wang

  • Affiliations:

  • Integrated Electronics Laboratory, Department of Electrical and Computer Engineering, Illinois Institute of Technology, 3301 S. Dearborn St., Chicago, IL 60616, USA, Tel.: (312) 567-6912, Fax: (31 ...;Integrated Electronics Laboratory, Department of Electrical and Computer Engineering, Illinois Institute of Technology, 3301 S. Dearborn St., Chicago, IL 60616, USA, Tel.: (312) 567-6912, Fax: (31 ...;Integrated Electronics Laboratory, Department of Electrical and Computer Engineering, Illinois Institute of Technology, 3301 S. Dearborn St., Chicago, IL 60616, USA, Tel.: (312) 567-6912, Fax: (31 ...;Integrated Electronics Laboratory, Department of Electrical and Computer Engineering, Illinois Institute of Technology, 3301 S. Dearborn St., Chicago, IL 60616, USA, Tel.: (312) 567-6912, Fax: (31 ...;Integrated Electronics Laboratory, Department of Electrical and Computer Engineering, Illinois Institute of Technology, 3301 S. Dearborn St., Chicago, IL 60616, USA, Tel.: (312) 567-6912, Fax: (31 ...

  • Venue:
  • Analog Integrated Circuits and Signal Processing
  • Year:
  • 2004

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Abstract

Electrostatic discharge (ESD) protection circuit design for radio-frequency (RF) integrated circuits emerges as a new design challenge. Yet currently, RF ESD protection is still a problem in definition. This paper proposes a new and comprehensive ESD-circuit interaction theory to address the complex mutual influences between the ESD protection networks and the circuits being protected in both directions. Design examples demonstrating the relevant key factors, e.g., switching and accidental triggering of ESD protection networks, as well as ESD-induced parasitic capacitive, resistive, noise coupling and self-generated noise effects, are provided to justify the new theory. Evaluation techniques, including s-parameter, Q-factor and overall specification examination, are discussed. The solutions to RF ESD protection are low-parasitic compact protection structures.