Finite-element solution of the semiconductor transport equations
Proc. of the sixth int'l. symposium on Computing methods in applied sciences and engineering, VI
Iterative solution of nonlinear equations in several variables
Iterative solution of nonlinear equations in several variables
Numerical Methods
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A method for discretizing the semiconductor transport equations using generalized mobility models is developed as an extension of the Scharfetter-Gummel finite difference approach. The method is sufficiently general to be applicable to nearly arbitrary empirical mobility models (including those for MOS surface effects) and may be used on a variety of mesh types in two or three dimensions. The impact of generalized mobility models on the sparsity of our resulting discrete equations is discussed. Convergence rate of a Newton's method linearization of the nonlinear system of equations is measured and interpreted. Some computational results from a study of short-channel MOSFETs are presented to illustrate the approach.