Microwave transistor amplifiers (2nd ed.): analysis and design
Microwave transistor amplifiers (2nd ed.): analysis and design
MOSFET modeling with SPICE: principles and practice
MOSFET modeling with SPICE: principles and practice
The Designer's Guide to Spice and Spectre
The Designer's Guide to Spice and Spectre
Foundation of rf CMOS and SiGe BiCMOS technologies
IBM Journal of Research and Development
A SiGe BiCMOS linear regulator with wideband, high power supply rejection
GLSVLSI '06 Proceedings of the 16th ACM Great Lakes symposium on VLSI
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The rapidly expanding telecommunications market has led to a need for advanced rf integrated circuits. Complex rf- and mixed-signal system-on-chip designs require accurate prediction early in the design schedule, and time-to-market pressures dictate that design iterations be kept to a minimum. Signal integrity is seen as a key issue in typical applications, requiring very accurate interconnect transmission-line modeling and RLC extraction of parasitic effects. To enable this, IBM has in place a mature project infrastructure consisting of predictive device models, complete rf characterization, statistical and scalable compact models that are hardware-verified, and a robust design automation environment. Finally, the unit and integration testing of all of these components is performed thoroughly. This paper describes each of these aspects and provides an overview of associated development work.