High-frequency noise in RF active CMOS mixers

Authors:
Payam Heydari
Affiliations:
University of California, Irvine, Irvine
Venue:
Proceedings of the 2004 Asia and South Pacific Design Automation Conference
Year:
2004

Citing 2
Cited 1

RF microelectronics

RF microelectronics
Operation and Modeling of the Mos Transistor (The Oxford Series in Electrical and Computer Engineering)

Operation and Modeling of the Mos Transistor (The Oxford Series in Electrical and Computer Engineering)

Detailed investigation of active CMOS mixers noise in submicron technology

Microelectronics Journal

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Abstract

A new analytical model for high-frequency noise in RF active CMOS mixers such as single-balanced and double-balanced architectures is presnted. The analysis includes the contribution of non-white gate-induced noise at the output as well as the spot noise figure (NF) of the RF CMOS mixer, while accounting for the non-zero correlation between the gate-induced noise and the channel thermal noise. The noise contribution of the RF transconductor as well as the switching pair on the output noise is discussed. The analytical model predicts that the output noise and NF are both a strong function of the LO frequency at gigahertz range of frequencies. Simulation results verify the accuracy of the analytical model.