Design of RF CMOS low noise amplifiers using a current based MOSFET model

Authors:
Virgínia Helena Varotto Baroncini;Oscar da Costa Gouveia-Filho
Affiliations:
Centro Federal de Educação Tecnológica do Paraná, Ponta Grossa, Brazil;Universidade Federal do Paraná, Curitiba, Brazil
Venue:
SBCCI '04 Proceedings of the 17th symposium on Integrated circuits and system design
Year:
2004

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Design and power optimization of CMOS RF blocks operating in the moderate inversion region

SBCCI '05 Proceedings of the 18th annual symposium on Integrated circuits and system design

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Abstract

This paper presents a design methodology for RF CMOS Low Noise Amplifiers (LNA). This methodology uses a current-based MOSFET model, which allows a detailed analysis of an LNA for all MOSFET's inversion regions. Design equations, including the induced gate noise in MOS devices are also presented and a design example with simulation results is shown.