Mixed-hybrid finite elements for the simulation of thermal oxidation in semiconductors

  • Authors:

  • Paola Causin;Riccardo Sacco

  • Affiliations:

  • INRIA Rocquencourt. Domaine de Voluceau, Rocquencourt B.P. 105, 78153 Le Chesnay Cedex, France;MOX-- Modeling and Scientific Computing, Dipartimento di Matematica "F.Brioschi", Politecnico di Milano, via Bonardi 9, 20133 Milano, Italy

  • Venue:
  • Journal of Computational and Applied Mathematics - Special issue: Selected papers from the 2nd international conference on advanced computational methods in engineering (ACOMEN2002) Liege University, Belgium, 27-31 May 2002
  • Year:
  • 2004

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Abstract

In this paper, we present and analyze a dual-mixed hybrid formulation capable of treating in a unified framework both compressible and incompressible problems in continuum mechanics. The potentialities of this approach are exploited in the computation of the stress field required in the simulation of the thermal oxidation process in semiconductor device technology.