Phase Change Memory Faults

Authors:
M. Jagadesh Kumar;Ali A. Orouji
Affiliations:
Indian Institute of Technology - New Delhi;Semnan University
Venue:
VLSID '06 Proceedings of the 19th International Conference on VLSI Design held jointly with 5th International Conference on Embedded Systems Design
Year:
2006

Citing 0
Cited 1

A durable and energy efficient main memory using phase change memory technology

Proceedings of the 36th annual international symposium on Computer architecture

Quantified Score

Hi-index	0.00

Visualization

Abstract

Using two-dimensional simulation, we report a new Gate-induced Barrier Field Effect Transistor (GBFET) which exhibits at least three orders of magnitude less OFF state leakage current when compared to a conventional poly-Si TFT. We demonstrate that the GBFET is completely free of pseudo-subthreshold conduction making it a very attractive device for active matrix liquid crystal display systems.