Surface evolution of elastically stressed films under deposition by a diffuse interface model

Authors:
Andreas Rätz;Angel Ribalta;Axel Voigt
Affiliations:
Crystal Growth Group, Research Center caesar, Ludwig-Erhard-Allee 2, 53175 Bonn, Germany;Crystal Growth Group, Research Center caesar, Ludwig-Erhard-Allee 2, 53175 Bonn, Germany;Crystal Growth Group, Research Center caesar, Ludwig-Erhard-Allee 2, 53175 Bonn, Germany
Venue:
Journal of Computational Physics
Year:
2006

Citing 4
Cited 3

A regularized equation for anisotropic motion-by-curvature

SIAM Journal on Applied Mathematics
On the Cahn-Hilliard equation with degenerate mobility

SIAM Journal on Mathematical Analysis
A convective Cahn-Hilliard model for the formation of facets and corners in crystal growth

Physica D
A phase-field model for highly anisotropic interfacial energy

Physica D

A level set approach to anisotropic flows with curvature regularization

Journal of Computational Physics
The influence of electric fields on nanostructures-Simulation and control

Mathematics and Computers in Simulation
An adaptive meshfree method for phase-field models of biomembranes. Part I: Approximation with maximum-entropy basis functions

Journal of Computational Physics

Quantified Score

Hi-index	31.46

Visualization

Abstract

We consider the heteroepitaxial growth of thin films by numerical simulations within a diffuse interface model. The model is applicable to describe the self-organization of nanostructures. The influence of strain, surface energies and kinetics on the surface evolution is considered. A matched asymptotic analysis shows the formal convergence of an anisotropic viscous Cahn-Hilliard model to a general surface evolution equation. The system is solved by adaptive finite elements in three dimensions and in special cases compared with sharp interface models.