Simulation of visible and ultra-violet group-III nitride light emitting diodes

Authors:
K. A. Bulashevich;V. F. Mymrin;S. Yu. Karpov;I. A. Zhmakin;A. I. Zhmakin
Affiliations:
Soft-Impact, Ltd., Device Modeling Department, P.O. Box 83, 27 Engels av., St. Petersburg 194156, Russia and A.F. Ioffe Physical Technical Institute, RAS, 26 Polytechnicheskaya str., St. Petersbur ...;Soft-Impact, Ltd., Device Modeling Department, P.O. Box 83, 27 Engels av., St. Petersburg 194156, Russia;Soft-Impact, Ltd., Device Modeling Department, P.O. Box 83, 27 Engels av., St. Petersburg 194156, Russia and Semiconductor Technology Research, Inc., P.O. Box 70604, Richmond, VA 23255-0604, USA;Soft-Impact, Ltd., Device Modeling Department, P.O. Box 83, 27 Engels av., St. Petersburg 194156, Russia and A.F. Ioffe Physical Technical Institute, RAS, 26 Polytechnicheskaya str., St. Petersbur ...;Soft-Impact, Ltd., Device Modeling Department, P.O. Box 83, 27 Engels av., St. Petersburg 194156, Russia and St. Petersburg Branch of Joint Supercomputer Centre, RAS, 26 Polytechnicheskaya str., S ...
Venue:
Journal of Computational Physics
Year:
2006

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Abstract

One-dimensional drift-diffusion model accounting for the unique properties of group-III nitrides is employed to simulate the carrier transport and radiative/non-radiative recombination of electrons and holes in light emitting diode heterostructures. Mixed finite-element method is used for numerical implementation of the model. The emission spectra are computed via the self-consistent solution of the Schrodinger-Poisson equations with account of complex valence band structure of nitride materials. Simulations of a number of single- and multiple-quantum well blue and ultraviolet light emitting diodes are presented and compared with available observations. Specific features of the III-nitride LED operation are considered in terms of modelling. Applicability of the drift-diffusion model to analysis of III-nitride LEDs is proved and still open questions are discussed.