High Linearity RF Amplifier Design
High Linearity RF Amplifier Design
An Analog Predistortion Integrated Circuit for Linearizing Power Amplifiers
MWSCAS '98 Proceedings of the 1998 Midwest Symposium on Systems and Circuits
Hi-index | 0.00 |
This paper presents the structure, test setup and measured results of a polynomial RF predistorter IC fabricated in a 0.35 驴m SiGe BiCMOS process. The predistorter is designed for the base station WCDMA band at 2.1 GHz. The predistortion signal is generated by a 5th-degree complex polynomial. Also a squared envelope is generated that can be used as a baseband injection signal to cancel 2nd-order distortion that typically causes memory effects. The performance of the predistorter was measured by driving a three-stage discrete power amplifier chain by a 2-tone test and a 3.84 MHz wide 3GPP WCDMA modulated signal. The 2-tone test showed more than 20 dB IM3 cancellation and the WCDMA signal's ACPR was improved by 8 dB.