Redistribution of arsenic during the reaction of nickel thin films with silicon at relatively high temperature: Role of agglomeration

  • Authors:

  • K. Hoummada;D. Mangelinck;C. Perrin;P. Gas;V. Carron;P. Holliger;E. Ziegler

  • Affiliations:

  • L2MP, CNRS-UMR6137, Univ. Paul Cézanne, 13397 Marseille Cedex 20, France;L2MP, CNRS-UMR6137, Univ. Paul Cézanne, 13397 Marseille Cedex 20, France;L2MP, CNRS-UMR6137, Univ. Paul Cézanne, 13397 Marseille Cedex 20, France;L2MP, CNRS-UMR6137, Univ. Paul Cézanne, 13397 Marseille Cedex 20, France;CEA-LETI, MINATEC, rue des Martyrs, 38054 Grenoble CEDEX 9, France;CEA-LETI, MINATEC, rue des Martyrs, 38054 Grenoble CEDEX 9, France;European Synchrotron Radiation Facility BP 220, 38043 Grenoble Cedex, France

  • Venue:
  • Microelectronic Engineering
  • Year:
  • 2006

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Abstract

The redistribution of As during the solid state reaction of nickel thin films with a n-doped (100) Si substrate has been analysed by secondary ion mass spectrometry (SIMS), X-ray reflectivity (XRR) and sheet resistance measurements. Heat treatment between 400^oC and 650^oC leads to the formation of the monosilicide (NiSi) and to very different SIMS depth profiles of As. The role of the agglomeration of NiSi on the SIMS measurements of As redistribution and particularly on As concentration at NiSi/Si interface is shown.