Properties of 50nm electroless films Ag-W-oxygen before and after low temperature, low activation energy resistivity decay

Authors:
E. Glickman;A. Inberg;G. Aviram;R. Popovitz;N. Croitoru;Y. Shacham-Diamand
Affiliations:
Physical Electronics Department, Tel Aviv University, Ramat Aviv 69978, Israel;Physical Electronics Department, Tel Aviv University, Ramat Aviv 69978, Israel;Physical Electronics Department, Tel Aviv University, Ramat Aviv 69978, Israel;Materials and Interfaces, Weizmann Institute of Science, Rehovot 76100, Israel;Physical Electronics Department, Tel Aviv University, Ramat Aviv 69978, Israel;Physical Electronics Department, Tel Aviv University, Ramat Aviv 69978, Israel
Venue:
Microelectronic Engineering
Year:
2006

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Abstract

50nm films Ag-(0.3-1at.% W)-oxygen deposited by electroless onto Pd activated SiO"2/Si show fast, low activation energy decay of their electrical resistivity @r after annealing above the threshold temperature T^*=90+/-10^oC. The decrease in @r was attributed in our previous works to surface diffusion controlled sintering. In attempt to understand the mechanism of this interesting effect we studied further the origin of open porosity, W segregation, evolution of the tungstate phase Ag"2W"2O"7 at the internal interfaces and temporal evolution of surface roughness in the course of annealing. A possible role of the tungstate phase transition to super ion conductive state in the diffusion mobility of Ag is speculated.