Effect of a thin W, Pt, Mo, and Zr interlayer on the thermal stability and electrical characteristics of NiSi

  • Authors:

  • Wei Huang;Lichun Zhang;Yuzhi Gao;Haiyan Jin

  • Affiliations:

  • Institute of Microelectronics, Peking University, Beijing 100871, PR China;Institute of Microelectronics, Peking University, Beijing 100871, PR China;Institute of Microelectronics, Peking University, Beijing 100871, PR China;Institute of Microelectronics, Peking University, Beijing 100871, PR China

  • Venue:
  • Microelectronic Engineering
  • Year:
  • 2007

Quantified Score

Hi-index 2.88

Visualization

Abstract

It is reported that the thermal stability of NiSi is improved by employing respectively the addition of a thin interlayer metal (W,Pt,Mo,Zr) within the nickel film. The results show that after rapid thermal annealing (RTA) at temperatures ranging from 650^oC to 800^oC, the sheet resistance of formed ternary silicide Ni(M)Si was less than 3@W/@?, and its value is also lower than that of pure nickel monosilicide. X-ray diffraction (XRD) and raman spectra results both reveal that only the Ni(M)Si phase exists in these samples, but the high resistance NiSi"2 phase does not. Fabricated Ni(M)Si/Si Schottky barrier devices displayed good I-V electrical characteristics, with the barrier height being located generally between 0.65eV and 0.71eV, and the reverse breakdown voltage exceeding to 40V. It shows that four kinds of Ni(M)Si film can be considered as the satisfactory local connection and contact material.