Multi-Gate MOSFET Design

Authors:
Gerhard Knoblinger
Affiliations:
Infineon Technologies
Venue:
ISQED '07 Proceedings of the 8th International Symposium on Quality Electronic Design
Year:
2007

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Design of ultra-wideband low-noise amplifiers in 45-nm CMOS technology: comparison between planar bulk and SOI FinFET devices

IEEE Transactions on Circuits and Systems Part I: Regular Papers - Special issue on ISCAS2008

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Abstract

Multi-Gate Field Effect Transistors (MuGFET) such as FinFETs and Triple-Gate FETs are the most promising device structures for sub-45nm CMOS technology nodes.The superior control of the channel due to multiple gates reduces short-channel effects and leakage currents.This opens the opportunity for further down scaling of the threshold and supply voltages and device performance improvements. Circuit performance also benefits from novel gate stack materials, reduced parasitic capacitances, and hole mobility improvement.