Interactive presentation: Statistical simulation of high-frequency bipolar circuits

  • Authors:

  • W. Schneider;M. Schroter;W. Kraus;H. Wittkopf

  • Affiliations:

  • Atmel Germany, Heilbronn, Germany;Dresden University of Technology, Dresden, Germany and University of California, San Diego, La Jolla, CA;Atmel Germany, Heilbronn, Germany;Dresden University of Technology, Dresden, Germany

  • Venue:
  • Proceedings of the conference on Design, automation and test in Europe
  • Year:
  • 2007

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Abstract

This paper describes a physics-based methodology for computationally efficient statistical modeling of high-frequency bipolar transistors along with its practical implementation into a production process design kit. Applications to statistical modeling, circuit simulation, and yield optimization are demonstrated for an opamp circuit. Experimental results are shown that verify the methodology.