Adaptive Optical Proximity Correction Using an Optimization Method

  • Authors:

  • Tetsuaki Matsunawa;Hirokazu Nosato;Hidenori Sakanashi;Masahiro Murakawa;Eiichi Takahashi;Tsuneo Terasawa;Toshihiko Tanaka;Osamu Suga;Tetsuya Higuchi

  • Affiliations:

  • 1University of Tsukuba;AIST, Umezono, Tsukuba, Ibaraki, Japan;AIST, Umezono, Tsukuba, Ibaraki, Japan;AIST, Umezono, Tsukuba, Ibaraki, Japan;AIST, Umezono, Tsukuba, Ibaraki, Japan;Semiconductor Leading Edge Technologies, Inc. 16-1 Onogawa, Tsukuba, Ibaraki, Japan;Semiconductor Leading Edge Technologies, Inc. 16-1 Onogawa, Tsukuba, Ibaraki, Japan;Semiconductor Leading Edge Technologies, Inc. 16-1 Onogawa, Tsukuba, Ibaraki, Japan;AIST, Japan

  • Venue:
  • CIT '07 Proceedings of the 7th IEEE International Conference on Computer and Information Technology
  • Year:
  • 2007

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Abstract

This paper proposes a new approach to the optical prox- imity correction (OPC) method which reduces OPC calcu- lation loads by employing an optimization method. OPC is a method of correcting for a mask pattern to improve the fidelity of an image pattern on a silicon wafer. How- ever, conventional OPC calculations have become increas- ingly complex as the size of semiconductor devices becomes even smaller. In order to overcome this problem, we pro- pose an adaptive OPC technology using an optimization method to realize OPC for the full-chip area at fast opera- tional speeds. The effectiveness of this approach in terms of reduced OPC calculation times and highly-accurate correc- tion is demonstrated through computational experiments.