The evolution of standard cell libraries for future technology nodes

  • Authors:
  • James Alfred Walker;James A. Hilder;Dave Reid;Asen Asenov;Scott Roy;Campbell Millar;Andy M. Tyrrell

  • Affiliations:
  • Intelligent Systems Group, Department of Electronics, University of York, York, UK YO10 5DD;Intelligent Systems Group, Department of Electronics, University of York, York, UK YO10 5DD;Device Modelling Group, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, UK G12 8LT;Device Modelling Group, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, UK G12 8LT;Device Modelling Group, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, UK G12 8LT;Device Modelling Group, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, UK G12 8LT;Intelligent Systems Group, Department of Electronics, University of York, York, UK YO10 5DD

  • Venue:
  • Genetic Programming and Evolvable Machines
  • Year:
  • 2011

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Abstract

Evolvable Hardware has been a discipline for over 15 years. Its application has ranged from simple circuit design to antenna design. However, research in the field has often been criticised for not addressing real world problems. Intrinsic variability has been recognised as one of the major challenges facing the semiconductor industry. This paper describes an approach that optimises designs within a standard cell library by altering the transistor dimensions. The proposed approach uses a Multi-objective Genetic Algorithm to optimise the device widths within a standard cell. The designs are analysed using statistically enhanced transistor models (based on 3D-atomistic simulations) and statistical Spice simulations. The goal is to extract high-speed and low-power designs, which are more tolerant to the random fluctuations present in current and future technology nodes. The results show improvements in both the speed and power of the optimised standard cells and that the impact of threshold voltage variation is reduced.