Dependence of electrical properties on interfacial layer of Ta2O5 films

  • Authors:

  • Jae-Woong Lee;Moon-Ho Ham;Wan-Joo Maeng;Hyungjun Kim;Jae-Min Myoung

  • Affiliations:

  • Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-Dong, Seoul 120-749, Republic of Korea;Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-Dong, Seoul 120-749, Republic of Korea;Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea;Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea;Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-Dong, Seoul 120-749, Republic of Korea

  • Venue:
  • Microelectronic Engineering
  • Year:
  • 2007

Quantified Score

Hi-index 2.88

Visualization

Abstract

The change in the thickness and chemical states of the interfacial layer and the related electrical properties in Ta"2O"5 films with different annealing temperatures were investigated. The high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the 700^oC-annealed Ta"2O"5 film remained to be amorphous and had the thinnest interfacial layer which was caused by Ta-silicate decomposition to Ta"2O"5 and SiO"2. In addition, the electrical properties were improved after annealing treatments. Our results suggest that an annealing treatment at 700^oC results in the highest capacitance and the lowest leakage current in Ta"2O"5 films due to the thinnest interfacial layer and non-crystallization.