Performance of current mirror with high-k gate dielectrics

Authors:
F. Crupi;P. Magnone;A. Pugliese;G. Cappuccino
Affiliations:
DEIS, University of Calabria, Via Pietro Bucci 42C, 87036 Arcavacata di Rende (CS), Italy;DEIS, University of Calabria, Via Pietro Bucci 42C, 87036 Arcavacata di Rende (CS), Italy;DEIS, University of Calabria, Via Pietro Bucci 42C, 87036 Arcavacata di Rende (CS), Italy;DEIS, University of Calabria, Via Pietro Bucci 42C, 87036 Arcavacata di Rende (CS), Italy
Venue:
Microelectronic Engineering
Year:
2008

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Abstract

This work compares the performance of the basic current mirror topology by using two different materials for gate dielectrics, the conventional SiON and an Hf-based high-k dielectrics. The impact of gate leakage and of channel length modulation on the basic current mirror operation is described. It is shown that in the case of SiON gate dielectrics with an equivalent oxide thickness (EOT) of 1.4nm, it is not possible to find a value for the channel length which allows a good trade-off to be obtained while minimizing the gate leakage and reducing the channel length modulation. On the other hand, the study demonstrates that in the case of HfSiON gate dielectrics with similar EOT, appropriate L values can be found obtaining very high output impedance current sources with reduced power consumption owing to low leakage and most of all with better parameter predictability.