Beating of the oscillations in the magnetocapacitance of a MODFET with Rasba spin-orbit interaction

  • Authors:

  • G. S. Kliros;P. C. Divari

  • Affiliations:

  • Department of Aeronautical Sciences, Division of Electronics and Communication Engineering, Hellenic Air-Force Academy, Dekeleia Air-Force Base GR-1010, Greece;Department of Physics, University of Ioannina, GR-45110 Ioannina, Greece

  • Venue:
  • Microelectronics Journal
  • Year:
  • 2007

Quantified Score

Hi-index 0.00

Visualization

Abstract

The effect of Rasba spin-orbit interaction (SOI) on the magnetocapacitance of the 2DEG in a MODFET is investigated. We present calculations on the density of states (DOS) of the 2DEG in a MODFET under the influence of both Rasba SOI and weak two-dimensional periodic modulation. Adopting a Gaussian broadening of magnetic-field-dependent width, we present a simple expression for the DOS, valid for the relevant weak magnetic fields and modulation strengths. In the presence of Rasba SOI and for weak potential modulation strengths, a typical beating pattern of the magnetocapacitance oscillations is observed in the low magnetic filed range. A simple relation that predicts the positions of nodes in the beating patterns is obtained. The interplay between the SOI and the periodic potential modulation is discussed.