Magnetocapacitance of a MODFET under two-dimensional periodic potential modulation

  • Authors:
  • G. S. Kliros;P. C. Divari

  • Affiliations:
  • Department of Aeronautical Sciences, Division of Electronics and Communication Engineering, Hellenic Air-Force Academy, Dekeleia Air-Force Base GR-1010, Greece;Department of Physics, University of Ioannina, GR-45110 Ioannina, Greece

  • Venue:
  • Microelectronics Journal
  • Year:
  • 2007

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Abstract

In this paper we present calculations on the density of states (DOS) and the magnetocapacitance of the 2DEG in a MODFET under two-dimensional (2D) weak periodic modulation in the presence of a perpendicular magnetic field. Adopting a Gaussian broadening of magnetic-field-dependent width, we present explicit and simple expressions for the DOS, valid for the relevant weak magnetic fields and modulation strengths. As the modulation strength in both directions increase, beating patterns of the magnetocapacitance oscillations are observed in the low-magnetic-field range (Weiss-oscillations regime) which are absent in the 1D weak modulation case.