Compensation technique for DC and transient instability of thin film transistor circuits for large-area devices

  • Authors:

  • G. Reza Chaji;Nader Safavian;Arokia Nathan

  • Affiliations:

  • Electrical and Computer Department, University of Waterloo, Waterloo, Canada N2L3G1;Electrical and Computer Department, University of Waterloo, Waterloo, Canada N2L3G1;London Centre for Nanotechnology, University College London, London, UK WC1H 0AH

  • Venue:
  • Analog Integrated Circuits and Signal Processing
  • Year:
  • 2008

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Abstract

A reliable driving scheme that can compensate for the inherent instability of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) is essential for implementation of large-area devices including displays and sensor arrays for bio-imaging applications. In particular, for high precision and high-resolution devices, the technique should be accurate and fast. A new driving scheme is presented that enables control of the DC and transient shift in the threshold voltage (V T ) and gate voltage of drive/amplifier TFT, while fulfilling the timing requirements for the different applications. The transient shift in the gate voltage has been known to contribute as much as 10% error in controlling the DC shift in the V T whereas it is less than 0.5% for the driving scheme presented here.