New method for the precise flux calculation of neutrals for arbitrary surfaces in profile etch simulations

  • Authors:

  • M. Hauguth;T. Danz;B. E. Volland;V. Ishshuk;D. Dreíler;I. W. Rangelow

  • Affiliations:

  • Department of Micro- and Nano-electronic Systems, TU Ilmenau, 98693 Ilmenau, Germany;Department of Micro- and Nano-electronic Systems, TU Ilmenau, 98693 Ilmenau, Germany;Department of Micro- and Nano-electronic Systems, TU Ilmenau, 98693 Ilmenau, Germany;Department of Micro- and Nano-electronic Systems, TU Ilmenau, 98693 Ilmenau, Germany;Department of Micro- and Nano-electronic Systems, TU Ilmenau, 98693 Ilmenau, Germany;Department of Micro- and Nano-electronic Systems, TU Ilmenau, 98693 Ilmenau, Germany

  • Venue:
  • Microelectronic Engineering
  • Year:
  • 2008

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Abstract

A method for precise neutral flux calculation inside etched features based on a finite element method is presented. This new method yields exact results and is suitable for arbitrary profile shapes at acceptable execution speed. The model parameters are the sticking coefficients of the neutral species to the different sample materials. The model is verified against systematic plasma etching experiments of silicon.