Technology exploration for graphene nanoribbon FETs

Authors:
Mihir Choudhury;Youngki Yoon;Jing Guo;Kartik Mohanram
Affiliations:
Rice University, Houston;University of Florida, Gainesville;University of Florida, Gainesville;Rice University, Houston
Venue:
Proceedings of the 45th annual Design Automation Conference
Year:
2008

Citing 1
Cited 3

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Semiconductor Device Modeling with Spice

Graphene nanoribbon FETs: technology exploration and CAD

Proceedings of the 2008 IEEE/ACM International Conference on Computer-Aided Design
A SPICE-compatible model of graphene nano-ribbon field-effect transistors enabling circuit-level delay and power analysis under process variation

Proceedings of the Conference on Design, Automation and Test in Europe
Functions classification approach to generate reconfigurable fine-grain logic based on Ambipolar Independent Double Gate FET (Am-IDGFET)

Microelectronics Journal

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Abstract

Graphene nanoribbon FETs (GNRFETs) are promising devices for beyond-CMOS nanoelectronics because of their excellent carrier transport properties and potential for large scale processing and fabrication. This paper combines atomistic quantum transport modeling with circuit simulation to perform technology exploration for GNRFET circuits. A quantitative study of the effects of variations and defects on the performance and reliability of GNRFET circuits is also presented. Simulation results indicate that whereas GNRFET circuits promise higher performance, lower energy consumption, and comparable reliability at similar operating points to scaled CMOS circuits, they are more susceptible to variations and defects. The results also motivate significant engineering, modeling, and simulation challenges facing the device and CAD communities involved in graphene electronics research.