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IEEE Transactions on Computers
Technology mapping for k/m-macrocell based FPGAs
FPGA '00 Proceedings of the 2000 ACM/SIGDA eighth international symposium on Field programmable gate arrays
Spectral Techniques in Digital Logic
Spectral Techniques in Digital Logic
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EDTC '97 Proceedings of the 1997 European conference on Design and Test
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ISMVL '06 Proceedings of the 36th International Symposium on Multiple-Valued Logic
IEEE Transactions on Computers
Technology exploration for graphene nanoribbon FETs
Proceedings of the 45th annual Design Automation Conference
Programmable logic circuits based on ambipolar CNFET
Proceedings of the 45th annual Design Automation Conference
SODA '09 Proceedings of the twentieth Annual ACM-SIAM Symposium on Discrete Algorithms
Reconfigurable double gate carbon nanotube field effect transistor based nanoelectronic architecture
Proceedings of the 2009 Asia and South Pacific Design Automation Conference
FinFETs and Other Multi-Gate Transistors
FinFETs and Other Multi-Gate Transistors
Novel library of logic gates with ambipolar CNTFETs: opportunities for multi-level logic synthesis
Proceedings of the Conference on Design, Automation and Test in Europe
Fine-grain reconfigurable logic cells based on double-gate CNTFETs
Proceedings of the 21st edition of the great lakes symposium on Great lakes symposium on VLSI
Universal logic modules based on double-gate carbon nanotube transistors
Proceedings of the 48th Design Automation Conference
Ambipolar double-gate FET binary-decision- diagram (Am-BDD) for reconfigurable logic cells
NANOARCH '11 Proceedings of the 2011 IEEE/ACM International Symposium on Nanoscale Architectures
High-performance carbon nanotube field-effect transistor with tunable polarities
IEEE Transactions on Nanotechnology
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Am-IDGFET is a new family of particular devices in view of the fact that it associates three benefits: (i) it is usually a 1-D electronic device (CNT or SiNW), meaning high mobility, achievable current density and high I"O"N/I"O"F"F ratio; (ii) Independently controlled gates which offers the device extra logic options; (iii) ambipolar behaviour opens the way for N- and P-type polarities in the same device via its back gate. The creativity of this work consists of looking at this new class of emerging technology as an opportunity for new design paradigms with no equivalent counterparts in CMOS technology. Nevertheless, to build a feasible and complete picture of ambipolar logic, innovative design approaches and tools are required. In this paper, we exploit functional classification, a powerful tool for the construction and analysis of Boolean functions, to build reconfigurable logic blocks by defining a hierarchical correlation between structures of functions classes with ambipolar devices. We demonstrate how this approach enables us to build Am-I DGFET-based n-input reconfigurable cells. Several dynamically reconfigurable 2-inputs logic cells with partial and full functionality are designed in this paper. We evaluate the performances of circuits designed from this approach in a case study focused on Double Gate Carbon Nanotube FET (DG-CNTFET) technology. Simulations results show efficiency to build fine grain reconfigurable cells with partial functionality. In the case of 9-functions reconfigurable cell, an improvement of 1.8X in terms of power delay product (PDP) is proved when compared to a CMOS-16nm technology. Fewer control signals are required and the area is reduced by 35% over CMOS technology.