Novel library of logic gates with ambipolar CNTFETs: opportunities for multi-level logic synthesis

  • Authors:
  • M. Haykel Ben Jamaa;Kartik Mohanram;Giovanni De Micheli

  • Affiliations:
  • Swiss Federal Institute of Technology, Lausanne, Switzerland;Rice University, Houston;Swiss Federal Institute of Technology, Lausanne, Switzerland

  • Venue:
  • Proceedings of the Conference on Design, Automation and Test in Europe
  • Year:
  • 2009

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Abstract

This paper exploits the unique in-field controllability of the device polarity of ambipolar carbon nanotube field effect transistors (CNT-FETs) to design a technology library with higher expressive power than conventional CMOS libraries. Based on generalized NOR-NAND-AOI-OAI primitives, the proposed library of static ambipolar CNTFET gates efficiently implements XOR functions, provides full-swing outputs, and is extensible to alternate forms with area-performance tradeoffs. Since the design of the gates can be regularized, the ability to functionalize them in-field opens opportunities for novel regular fabrics based on ambipolar CNTFETs. Technology mapping of several multi-level logic benchmarks --- including multipliers, adders, and linear circuits --- indicates that on average, it is possible to reduce both the number of gates and area by ~ 38% while also improving performance by 6.9x.