Reducing transistor count in clocked standard cells with ambipolar double-gate FETs

  • Authors:
  • K. Jabeur;D. Navarro;I. O'Connor;P. E. Gaillardon;M. H. Ben Jamaa;F. Clermidy

  • Affiliations:
  • University of Lyon, Ecole Centrale de Lyon, Ecully, France;University of Lyon, Ecole Centrale de Lyon, Ecully, France;University of Lyon, Ecole Centrale de Lyon, Ecully, France;CEA-LETI-MINATEC, Grenoble, France;CEA-LETI-MINATEC, Grenoble, France;CEA-LETI-MINATEC, Grenoble, France

  • Venue:
  • Proceedings of the 2010 IEEE/ACM International Symposium on Nanoscale Architectures
  • Year:
  • 2010

Quantified Score

Hi-index 0.00

Visualization

Abstract

This paper presents a set of circuit design approaches to achieve clocked standard logic cell functions with ambipolar double-gate devices such as the Double Gate Carbon Nanotube FET (DG-CNTFET). The cells presented in this work use the infield controllability of the device to reduce transistor count over conventional standard cells by only requiring n+1 transistors (where n is the fan-in), and achieve improved time delay by a factor of 2 for comparable power consumption.