FinFETs and Other Multi-Gate Transistors

Authors:
J.-P. Colinge
Affiliations:
-
Venue:
FinFETs and Other Multi-Gate Transistors
Year:
2007

Citing 0
Cited 12

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Modeling of electrostatics and drain current in nanoscale quadruple-gate MOSFET using conformal mapping techniques

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Modeling symmetrical independent gate FinFET using predictive technology model

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Design space exploration of FinFET cache

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Functions classification approach to generate reconfigurable fine-grain logic based on Ambipolar Independent Double Gate FET (Am-IDGFET)

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Monte Carlo simulation of diffusive-to-ballistic transition in phonon transport

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Abstract

FinFETs and Other Multi-Gate Transistors provides a comprehensive description of the physics, technology and circuit applications of multigate field-effect transistors (FETs). It explains the physics and properties of these devices, how they are fabricated and how circuit designers can use them to improve the performances of integrated circuits. The International Technology Roadmap for Semiconductors (ITRS) recognizes the importance of these devices and places them in the "Advanced non-classical CMOS devices" category. Of all the existing multigate devices, the FinFET is the most widely known. FinFETs and Other Multi-Gate Transistors is dedicated to the different facets of multigate FET technology and is written by leading experts in the field.