Getting to the bottom of deep submicron
Proceedings of the 1998 IEEE/ACM international conference on Computer-aided design
FinFETs and Other Multi-Gate Transistors
FinFETs and Other Multi-Gate Transistors
Reducing variability in chip-multiprocessors with adaptive body biasing
Proceedings of the 16th ACM/IEEE international symposium on Low power electronics and design
3D vs. 2D analysis of FinFET logic gates under process variations
ICCD '11 Proceedings of the 2011 IEEE 29th International Conference on Computer Design
Exploring sub-20nm FinFET design with predictive technology models
Proceedings of the 49th Annual Design Automation Conference
Dual- Independent-Gate FinFETs for Low Power Logic Circuits
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
| Hi-index | 0.00 |
Predicting MOSFET models plays a pivotal role in circuit design and its optimization. Independent Gate FinFETs (IGFinFET) are interesting for designers as they are more flexible than Common Multi-Gate FinFETs (CMGFinFET) in digital circuit design. In this work, we implement a model for symmetrical IGFinFET using CMGFinFET model based on Multi-Gate Predictive Technology Model (PTM-MG). This model has been developed from TCAD IGFinFET, based on previously published experimental results of CMG-FinFET. Different basic gates in SG (shorted gate), LP (low power), IG (low area), and IG/LP modes have been designed using the implemented model. For LP, IG, and IG/LP NAND gates, the leakage power is reduced by 89%, 26%, and 67%, respectively in comparison to SG. To show that our model does not have any convergence problem for large circuits, we used ISCAS'85 benchmark suite. The results show that for independent gate in high performance PTM-MG library, on average we can save up to 24% in the number of transistors and lower the total power by 42%.