Optical lithography stalls X-rays

  • Authors:
  • Gary E. Flores;Bruce Kirkpatrick

  • Affiliations:
  • -;-

  • Venue:
  • IEEE Spectrum
  • Year:
  • 1991

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Abstract

The revival in optical lithography resulting from continuing advances in photoresists, phase-shifting masks, high-numerical-aperture step-and-repeat optical systems, multilevel-resist processing, and top-surface imaging techniques is discussed. Optical lithography is being used to make advanced IC chips, with 0.35 μm geometries in research, 0.5 μm in production. Ultraviolet (UV) light in the 200-400 nm range is the predominant system for IC manufacturing technology. Deep-UV lithography is not yet accepted for production processes, mostly due to the lack of commercially available positive and negative-tone photoresist systems for deep-UV wavelengths. In addition, negative-tone resists are temperature-sensitive and therefore hard to handle in a manufacturing environment, extensive gas-handling facilities are required for deep-UV excimer laser sources, and optical components have to be replaced often because the intense laser energy devitrifies lenses quickly