Microelectronic circuits, 2nd ed.
Microelectronic circuits, 2nd ed.
Operation and modeling of the MOS transistor
Operation and modeling of the MOS transistor
Microelectronic circuits and devices (2nd ed.)
Microelectronic circuits and devices (2nd ed.)
Microelectronic Circuit Analysis and Design
Microelectronic Circuit Analysis and Design
CMOS Digital Integrated Circuits Analysis & Design
CMOS Digital Integrated Circuits Analysis & Design
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The aim of this paper is to research the impact of physical parameters which characterize the MOSFET transistors structure on the threshold voltage value. The MOSFET threshold voltage value will have influence in behaviour of electronic device which contain MOSFET transistors. The results obtained emphasize the impact of each single physical parameter on the total value of the threshold voltage. Moreover, all of these parameters will have significant and small impact on the threshold voltage. Hence, by adjusting the values of MOSFET physical parameters the accepted threshold voltage can be achieved. As the threshold voltage will have influence on critical voltage values which characterise MOSFET digital circuits and delays during transfer logic states, it must be taken into consideration during design phase of logic gates.