Defect detection in patterned wafers using multichannel Scanning Electron Microscope

  • Authors:
  • Maria Zontak;Israel Cohen

  • Affiliations:
  • The Department of Electrical Engineering, Technion - Israel Institute of Technology, Technion City, Haifa 32000, Israel;The Department of Electrical Engineering, Technion - Israel Institute of Technology, Technion City, Haifa 32000, Israel

  • Venue:
  • Signal Processing
  • Year:
  • 2009

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Abstract

Recent computational methods of wafer defect detection often inspect Scanning Electron Microscope (SEM) images of the wafer. In this paper, we propose a kernel-based approach to multichannel defect detection, which relies on simultaneous acquisition of three different images for each sample in a SEM tool. The reconstruction of a source patch from reference patches in the three channels is constrained by a similarity criterion across the three SEM images. The improved performance of the proposed algorithm is demonstrated, compared to a single-channel kernel-based defect detection method.