Integrated plasma processing simulation framework, linking tool scale plasma models with 2D feature scale etch simulator

  • Authors:

  • M. Hauguth;B. E. Volland;V. Ishchuk;D. Dressler;T. Danz;I. W. Rangelow;G. Kokkoris;E. Gogolides;A. Goodyear;M. Cooke

  • Affiliations:

  • Department of Micro- and Nano-electronic Systems, Technical University Ilmenau, PF 10 05 65, 98683 Ilmenau, Germany;Department of Micro- and Nano-electronic Systems, Technical University Ilmenau, PF 10 05 65, 98683 Ilmenau, Germany;Department of Micro- and Nano-electronic Systems, Technical University Ilmenau, PF 10 05 65, 98683 Ilmenau, Germany;Department of Micro- and Nano-electronic Systems, Technical University Ilmenau, PF 10 05 65, 98683 Ilmenau, Germany;Department of Micro- and Nano-electronic Systems, Technical University Ilmenau, PF 10 05 65, 98683 Ilmenau, Germany;Department of Micro- and Nano-electronic Systems, Technical University Ilmenau, PF 10 05 65, 98683 Ilmenau, Germany;Institute of Microelectronics, National Center for Scientific Research "Demokritos", Greece;Institute of Microelectronics, National Center for Scientific Research "Demokritos", Greece;Oxford Instruments Plasma Technology, North End, Yatton, Bristol, BS49 4AP, UK;Oxford Instruments Plasma Technology, North End, Yatton, Bristol, BS49 4AP, UK

  • Venue:
  • Microelectronic Engineering
  • Year:
  • 2009

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Abstract

An integrated, extensible, full featured inductively coupled plasma (ICP) reactor simulation environment with a 2D feature scale etch simulator is presented. It incorporates tool scale plasma chemistry and feature scale trench evolution. Flexibility is achieved by software plugins for gas phase and surface reaction models that can be freely adapted and extended to a wide range of reactant-material systems. Available plasma chemistries cover SF"6, C"4F"8 and O"2 plasmas and are implemented by global models capturing both gas phase and wall-surface reaction kinetics. Surface reaction models for Si, SiO"2, and organic polymers have been developed. Validation of simulation agreement with experimental data is presented for etching of Si by SF"6 plasma.