Semiconductor equations
Conservative numerical schemes for the Vlasov equation
Journal of Computational Physics
A coupled Schrödinger drift-diffusion model for quantum semiconductor device simulations
Journal of Computational Physics
Journal of Computational Physics
Journal of Computational Physics
Journal of Computational Physics
Nonoscillatory Interpolation Methods Applied to Vlasov-Based Models
SIAM Journal on Scientific Computing
An Asymptotically Stable Semi-Lagrangian scheme in the Quasi-neutral Limit
Journal of Scientific Computing
Hi-index | 31.45 |
We model a nanoMOSFET by a mesoscopic, time-dependent, coupled quantum-classical system based on a sub-band decomposition and a simple scattering operator. We first compute the sub-band decomposition and electrostatic force field described by a Schrodinger-Poisson coupled system solved by a Newton-Raphson iteration using the eigenvalue/eigenfunction decomposition. The transport in the classical direction for each sub-band modeled by semiclassical Boltzmann-type equations is solved by conservative semi-lagrangian characteristic-based methods. Numerical results are shown for both the thermodynamical equilibrium and time-dependent simulations in typical nowadays nanoMOSFETs.