Efficient implementation of essentially non-oscillatory shock-capturing schemes
Journal of Computational Physics
Deterministic particle simulations of the Boltzmann transport equation of semiconductors
Journal of Computational Physics
Journal of Computational Physics
Efficient implementation of weighted ENO schemes
Journal of Computational Physics
A finite difference scheme solving the Boltzmann-Poisson system for semiconductor devices
Journal of Computational Physics
A deterministic solver for a hybrid quantum-classical transport model in nanoMOSFETs
Journal of Computational Physics
Hi-index | 31.45 |
We propose a direct solver to the non-stationary Boltzmann-Poisson system for simulating the electron transport in two-dimensional GaAs devices. The GaAs conduction band is approximated by a two-valley model. All of the important scattering mechanisms are taken into account. Our numerical scheme consists of the combination of the multigroup approach to deal with the dependence of the electron distribution functions on the three-dimensional electron wave vectors and a high-order WENO reconstruction procedure for treating their spatial dependences. The electric field is determined self-consistently from the Poisson equation. Numerical results are presented for a GaAs-MESFET. We display electron distribution functions as well as several macroscopic quantities and compare them to those of Monte Carlo simulations. In addition, we study the influence of the used discretization on the obtained results.