A novel sub-1 volt bandgap reference with all CMOS

  • Authors:
  • Sameer Somvanshi;S. C. Bose;Anu Gupta

  • Affiliations:
  • EEE Department, BITS-Pilani, Rajasthan, India;IC Design Group, CEERI-Pilani, Rajasthan, India;EEE Department, BITS-Pilani, Rajasthan, India

  • Venue:
  • ICC'08 Proceedings of the 12th WSEAS international conference on Circuits
  • Year:
  • 2008

Quantified Score

Hi-index 0.00

Visualization

Abstract

This paper deals with the design of novel sub-1-V bandgap reference circuit using only MOS transistors in 0.18 µm CMOS technology, for a supply voltage of 1.8V. The circuit produces a voltage reference of 466.5 mV at 27°C with a temperature coefficient of 28.4 ppm/°C in the range of -20 to +120°C. The power supply rejection of circuit is -30 dB at 8 KHz and this rejection further increase to -50 dB at 10 KHz. Power dissipation is 3.98 µW. The circuit is also tested at four process corners. Circuit is simulated with Eldo SPICE.