Thermal-Assisted Spin Transfer Torque Memory (STT-RAM) Cell Design Exploration

Authors:
Hai Li;Haiwen Xi;Yiran Chen;John Stricklin;Xiaobin Wang;Tong Zhang
Affiliations:
-;-;-;-;-;-
Venue:
ISVLSI '09 Proceedings of the 2009 IEEE Computer Society Annual Symposium on VLSI
Year:
2009

Citing 0
Cited 1

Stochastic modeling of bipolar resistive switching in metal-oxide based memory by Monte Carlo technique

Journal of Computational Electronics

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Abstract

Thermal-assisted spin-transfer torque random access memory (STT-RAM) has been considered as a promising candidate of next-generation nonvolatile memory technology. We conducted finite element simulation on thermal dynamics in the programming process of thermal-assisted STT-RAM. Special attentions have been paid to the scalability and design space of the thermal-assist programming scheme by varying the memory element dimension and resistance-area product. We also provide systematic analysis and comparison between the thermal-assisted STT-RAM and standard STT-RAM. Discussions on the writeability and scalability of thermal-assisted STT-RAM are also conducted.