Numerical recipes in C (2nd ed.): the art of scientific computing
Numerical recipes in C (2nd ed.): the art of scientific computing
FRAM Memory Technology - Advantages for Low Power, Fast Write, High Endurance Applications
ICCD '05 Proceedings of the 2005 International Conference on Computer Design
Proceedings of the 45th annual Design Automation Conference
Thermal-Assisted Spin Transfer Torque Memory (STT-RAM) Cell Design Exploration
ISVLSI '09 Proceedings of the 2009 IEEE Computer Society Annual Symposium on VLSI
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A stochastic model of the resistive switching mechanism in bipolar metal-oxide based resistive random access memory (RRAM) is presented. The distribution of electron occupation probabilities obtained is in agreement with previous work. In particular, a low occupation region is formed near the cathode. Our simulations of the temperature dependence of the electron occupation probability near the anode and the cathode demonstrate a high robustness of the low occupation region. This result indicates that a decrease of the switching time with increasing temperature cannot be explained only by reduced occupations of the vacancies in the low occupation region, but is related to an increase of the mobility of the oxide ions. A hysteresis cycle of RRAM switching simulated with the stochastic model including the ion dynamics is in good agreement with experimental results.